Scientific papers

R.Tomašiūnas, I.Reklaitis, E.Radiunas, G.Juška, R.Ritasalo, T.Pilvi, M.Mandl, S.Taeger, M.Strassburg. ALD oxides for GaN interfaces: a comparative view on the flat band. 21st International Conference on Transparent Optical Networks, ICTON '19, July 9-13, 2019, Angers, France. IEEE Proc., 4p., 2019 (ISBN: 978-1-7281-2779-8/19).

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R.Tomašiūnas, I.Reklaitis, L.Krencius, P.Vitta, S.Karpov, H.J.Lugauer, M.Strassburg. Differential charge carrier lifetime investigated in a blue InGaN LED at operational conditions. 20th International Conference on Transparent Optical Networks, ICTON '18, July 5-9, 2018, Bucharest, Romania. IEEE Proc., 4p., 2018 (ISBN: 978-1-5386-6604-3/18). 

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V.Svrcek, M.Kolenda, A.Kadys, I.Reklaitis, D.Dobrovolskas, T.Malinauskas, M.Lozach, D.Mariotti, M.Strassburg, R.Tomašiūnas. Significant Carrier Extraction Enhancement at the Interface of an InN/p-GaN Heterojunction under Reverse Bias Voltage. Nanomaterials 8, 1039 (2018).

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Reklaitis, L.Krencius, T.Malinauskas, S.Yu.Karpov, H.J.Lugauer, I.Pietzonka, M.Strassburg, P.Vitta, R.Tomašiūnas. Time of carrier escape and recombination coefficients in InGaN quantum-well active regions of blue, cyan, and green light-emitting diodes. Semicond. Sci. Technol. 34, 015007 (2019).

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Conference Abstracts

iwn2018

R.Tomašiūnas, I.Reklaitis, T.Malinauskas, S.Stanionytė, E.Radiunas, G.Juška, R.Ritasalo, T.Pilvi, M.Mandl, V.Müller, S.Taeger, M.Strassburg. ALD oxides towards LED improvement. 21st International Conference on Transparent Optical Networks, ICTON '19, July 9-13, 2019, Angers, France. (invited).

Read Abstract ICTON2019_Tomasiunas.pdf

iwn2018

M.Kolenda, V.Svrcek, A.Kadys, I.Reklaitis, D.Dobrovolskas, T.Malinauskas, R.Tomasiunas. Carrier extraction enhancement at InN/p-GaN interface heterojunction under reverse bias voltage. International Workshop on Nitride Semiconductors 2018, IWN 2018, November 11-16, 2018, Kanazawa, Japan.

Read Abstract MK_IWN2018_abstract.pdf and poster Poster_IWN2018.pptx

TCM_2018_site

7th  International Symposium on Transparent and Conductive Materials (TCM 2018), October 14 - 18, 2018, Platanias, Chania, Crete, Greece:

V.Müller. Insight into solid state lighting and functional materials for optoelectronic devices.

Read Abstract 180518_Abstract_Mueller.pdf

R.Tomašiūnas, E.Radiūnas, G.Domann, P.Löbmann, V.Müller, D.O'Brien, M.Strassburg. Sol-gel derived functional layers: impact on the film surface and bulk morphology.

Read Abstract TCM_2018_Tomasiunas_loeb_VMa.docx

D.Gaspar, S.Panigrahi, L.Pereira, E.Fortunato, R.Martins. Hydrogenated Indium oxide-based TCOs with improved electro-optical properties. 

Read Abstract TCM2018_DianaGaspar.docx

C.Marques, D.Gaspar, L.Pereira, E.Fortunato, R.Martins. Influence of doping in crystallinity and electrical properties of sprayed p-type NiO thin films. 

Read Abstract NiO_spray.docx

R,Walter, S.Roellgen, N.Stieglmeier, M.Maute. Low-damage ITO sputtering for LED application. 

Read Abstract TCM_Abstract_OSRAM-Opto-Semiconductors-GmbH_Roellgen-Stefan.pdf

R.Ritasalo, T.Suni, T.Pilvi, R.Tomasiunas, I.Reklaitis, S.Taeger, E.Hörner, M.Mandl. Screening of barrier materials deposited by ALD for the use in LED lightning. 

Read Abstract TMC2018_Flingo_barrier.docx

icton2018

R.Tomašiūnas, I.Reklaitis, L.Krencius, P.Vitta, S.Karpov, H.J.Lugauer, M.Strassburg. Differential charge carrier lifetime in InGaN LEDs under working conditions. 20th International Conference on Transparent Optical Networks, ICTON '18, July 5-9, 2018, Bucharest, Romania. (invited)

Read Abstract ICTON2018_Tomasiunas.docx

ALD-ALE_2018_header

R.Ritasalo, T.Suni, T.Pilvi, R.Tomasiunas, I.Reklaitis, S.Taeger, E.Hörner, M.Mandl. Screening of ALD barrier materials towards use in LED lightning. 18th International Conference on Atomic Layer Deposition (ALD 2018), July 29-August 1, 2018, Incheon, South Korea.

Read Abstract ALD2018_barrier_draft_ver4b.docx and poster draft_ALD2018_Poster-Barrier_materials-V3.jpg

Workshops

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